@article{ref1,
title="Lateral growth of cobalt suicide observed by an MeV helium ion microprobe",
journal="Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
year="1992",
author="Kinomura, A. and Takai, M. and Namba, S. and Ryssel, H. and Tsien, P.H. and Burte, E. and Satou, M. and Chayahara, A.",
volume="64",
number="1-4",
pages="770-773",
abstract="Lateral growth of cobalt suicide on silicon was investigated by a 1.5 MeV helium ion microprobe with Rutherford backscattering (RBS). Lateral and cross-sectional cobalt distributions in cobalt suicide patterns were directly observed by RBS-mapping and RBS-tomography methods. Comparison between arsenic-implanted (200 keV, 7 ×1015 As+ cm2) and unimplanted patterns revealed that ion beam mixing by arsenic implantation suppressed the lateral growth of cobalt suicide during rapid thermal annealing at 1000°C for 1 s. © 1992.<p /><p>Language: en</p>",
language="en",
issn="0168-583X",
doi="10.1016/0168-583X(92)95575-C",
url="http://dx.doi.org/10.1016/0168-583X(92)95575-C"
}