@article{ref1,
title="Electronic properties of the Ce/4H-SiC interface studied by x-ray Photoemission spectroscopy",
journal="Journal of applied physics",
year="2006",
author="Kildemo, M. and Grossner, U. and Raaen, S.",
volume="100",
number="5",
pages="-",
abstract="The deposition and annealing in ultrahigh vacuum of 5-6 ML (monolayers) of cerium on clean reconstructed Si-face 4H-SiC (0001) are studied by x-ray photoemission spectroscopy and low-energy electron diffraction. Band bending as a function of annealing was studied by shifts of the bulk peak contribution in the C 1s and Si 2p spectra relative to the clean reconstructed surface. Suicide formation was studied by low binding energy components in the C 1s and Si 2p spectra. A large relative upward band bending of 0.3-0.4 eV takes place upon deposition of Ce on 4//-S1C at room temperature. Upon annealing to 350 °C, a disordered CeSixCy, interface layer forms, as observed from chemically shifted components in the Si 2p and C 1s spectra. Annealing to 600 °C causes the interface to become CeSi2-x, and carbon desorbs from the interface. A maximum relative band bending of 0.6 eV is observed from 400 to 600 °C. Further heating of the sample to 850-1000 °C results in a relative total upward band bending of approximately 0.4 eV and a relatively sharp CeSi2-x peak in the Si 2p spectrum. SiC bulk bonds appear not to be broken and it is found that a Ce overlayer terminates the layer, with a cerium suicide layer at the interface. © 2006 American Institute of Physics.<p /><p>Language: en</p>",
language="en",
issn="0021-8979",
doi="10.1063/1.2338131",
url="http://dx.doi.org/10.1063/1.2338131"
}