@article{ref1,
title="Improvement of electrical properties in Sub-0.1 μm MOSFETS with a novel shallow trench isolation structure",
journal="Journal of the Korean Physical Society",
year="2003",
author="Eom, G.Y. and Oh, H.S.",
volume="43",
number="1",
pages="102-104",
abstract="This paper presents a novel process to improve the electrical characteristics and the reliability in submicron (<0.1 μm) Metal Oxide Semiconductor Fleld Effect Transistors (MOSFET) devices using a novel shallow trench isolation (STI) structure and a two-step titanium-salicidation process. Differently from normal LOCOS technology. Ultra Large Scale Integration (ULSI) devices using STI technology have a unique &quot;inverse narrow-channel effect&quot; when the channel width of the device is scaled down. Scanning electron microscopy showed that perfect growth of TiSi2 and the STI structure improved the narrow channel effect. A mobility of 228 cm 2/V·s was measured for 0.1-μm NMOSFET at gate voltage (Vg) = 0.5 V. A junction leakage current of 2.95 × 10 -10 A was measured from an n+/p-well at a reverse voltage of 0.1 V. The drain saturation current of 1.5 × 10-4 A/μm was measured from PMOSFET at Vg = 1.5 V. A subthreshold slope of 79 mV/decade was measured for a PMOSFET as the drain current was varied from 1 μA up to 10 μA.<p /><p>Language: en</p>",
language="en",
issn="0374-4884",
doi="",
url="http://dx.doi.org/"
}