@article{ref1,
title="The Role of Surface Chemistry on Spreading Kinetics of Molten Silicides on Silicon Carbide",
journal="Interface Science",
year="2004",
author="Rado, C. and Eustathopoulos, N.",
volume="12",
number="1",
pages="85-92",
abstract="The spreading time for millimeter-sized droplets of nonreactive molten suicides on silicon carbide in high vacuum is several orders of magnitude higher than typical spreading times observed in nonreactive metal/ceramic systems. To explain this paradox, two types of experiments were performed: (i) wetting experiments for various nonreactive CuSi alloys on α-SiC single crystals using the sessile drop and dispensed drop techniques, with emphasis on determining the initial contact angle; and (ii) characterization of surface chemistry of SiC after different heat treatments in high-vacuum furnaces. It is shown that spreading kinetics in these systems are controlled by the kinetics of removing of wetting barriers present or developed in situ on SiC surface.<p /><p>Language: en</p>",
language="en",
issn="0927-7056",
doi="10.1023/B:INTS.0000012297.30968.02",
url="http://dx.doi.org/10.1023/B:INTS.0000012297.30968.02"
}