@article{ref1,
title="The relation between phase transformation and onset of thermal degradation in nanoscale CoSi 2-polycrystalline silicon structures",
journal="Journal of applied physics",
year="2004",
author="Van Dal, M.J.H. and Jawarani, D. and Van Berkum, J.G.M. and Kaiser, M. and Kittl, J.A. and Vrancken, C. and De Potter, M. and Lauwers, A. and Maex, K.",
volume="96",
number="12",
pages="7568-7573",
abstract="Insight in the thermal degradation phenomena and the relation to phase transformation is presented for cobalt disilicide (CoSi 2) on narrow polysilicon lines (linewidth ranging from 30 nm to 1 μm) using electrical and morphological analysis in the temperature range 650-900°C. When polysilicon lines are scaled laterally to 30 nm, an abrupt CoSi 2 sheet resistance increase (>1000 Ω/sq) is observed, which is attributed to silicide agglomeration. At localized positions along the 30-nm Co-silicided lines, Si/silicide layer inversion is observed. At low formation temperature (650°C), no agglomeration phenomena occur, but incidentally the transition from CoSi into CoSi 2 is delayed on the 30-nm-wide polysilicon structures to such an extent that the CoSi 2 growth virtually stops. Only using nitrogen implantation through CoSi and a CoSi 2 formation temperature of 900°C, low sheet resistance values are obtained for 35-nm-wide polysilicon lines. Based on the results obtained in the present work, we propose that the abrupt increase in the CoSi 2 sheet resistance for the narrow polysilicon lines is a consequence of a decrease in the availability of nucleation sites leading to the reduction of the CoSi/CoSi 2 transformation rate, which, in turn, results in the agglomeration of Co suicide at elevated temperature. © 2004 American Institute of Physics.<p /><p>Language: en</p>",
language="en",
issn="0021-8979",
doi="10.1063/1.1815384",
url="http://dx.doi.org/10.1063/1.1815384"
}