@article{ref1,
title="Growth of pinhole-free epitaxial Yb and Er suicide thin films on atomically clean (111)Si",
journal="Journal of applied physics",
year="2004",
author="Tsai, W.C. and Chi, K.S. and Chen, L.J.",
volume="96",
number="9",
pages="5353-5356",
abstract="The growth of pinhole-free epitaxial Yb and Er suicide thin films on (111)Si has been achieved by capping appropriate amorphous Si(a-Si) layer at room temperature followed by annealing at 700°C in an ultrahigh vacuum chamber. The thickness of the a-Si capping layer was selected to be such that the consumption of Si atoms from the substrate is minimized. The design and reimplementation of the scheme involving appropriate thickness of a-Si capping layer was based on an understanding of the formation mechanism of the pinholes with epitaxial rare-earth islands as diffusion barriers for Si diffusion at the silicide/Si interfaces. © 2004 American Institute of Physics.<p /><p>Language: en</p>",
language="en",
issn="0021-8979",
doi="10.1063/1.1769604",
url="http://dx.doi.org/10.1063/1.1769604"
}